INHOMOGENEOUS STRAIN FIELD SCATTERING DEFORMATION POTENTIAL .2. FREE-CARRIER MOBILITY ASSOCIATED WITH DISLOCATION STRAIN FIELDS IN SEMICONDUCTORS

被引：5

作者：

FARVACQUE, JL ^{[1
]}

LENGLART, P ^{[1
]}

机构：

[1] UNIV SCI & TECH LILLE,CNRS,STRUCT & PROPRIETES ETAT SOLIDE LAB 234,F-59650 VILLENEUVE ASCQ,FRANCE

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1977年 / 80卷 / 02期

关键词：

D O I：

10.1002/pssb.2220800204

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：433 / 439

页数：7

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[9] INHOMOGENEOUS STRAIN FIELD SCATTERING DEFORMATION POTENTIAL .1. THEORY [J].

FARVACQUE, JL ;

LENGLART, P .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 80 (01) :361-367

[10] SCATTERING OF FREE CARRIERS DUE TO STRAIN FIELD OF SCREW DISLOCATIONS IN SEMICONDUCTORS [J].

FARVACQUE, JL ;

GERLACH, E .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 77 (02) :651-656

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