MODELING OF INTERFACE REACTION-PRODUCTS WITH HIGH-RESOLUTION CORE-LEVEL PHOTOEMISSION

被引：10

作者：

GRIONI, M

DELGIUDICE, M

JOYCE, JJ

WEAVER, JH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573346

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：907 / 910

页数：4

共 14 条

[1] CORE-LEVEL BINDING-ENERGY SHIFTS DUE TO RECONSTRUCTION ON THE SI(111) 2X1 SURFACE
BRENNAN, S
STOHR, J
JAEGER, R
ROWE, JE
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (17) : 1414 - 1418
[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[3] ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES
BRILLSON, LJ
BRUCKER, CF
STOFFEL, NG
KATNANI, AD
MARGARITONDO, G
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (13) : 838 - 841
[4] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[5] CLUSTER-INDUCED REACTIONS AT A METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111)
GRIONI, M
JOYCE, J
CHAMBERS, SA
ONEILL, DG
DELGIUDICE, M
WEAVER, JH
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (24) : 2331 - 2334
[6] MODELING A HETEROGENEOUS METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111)
GRIONI, M
JOYCE, J
DELGIUDICE, M
ONEILL, DG
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1984, 30 (12): : 7370 - 7373
[7] GRIONI M, UNPUB PHYS REV B
[8] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
HIMPSEL, FJ
HEIMANN, P
CHIANG, TC
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
[9] THE OXIDATION OF GAAS(110) - A REEVALUATION
LANDGREN, G
LUDEKE, R
JUGNET, Y
MORAR, JF
HIMPSEL, FJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 351 - 358
[10] SCHOTTKY-BARRIER FORMATION OF AG ON GAAS(110)
LUDEKE, R
CHIANG, TC
MILLER, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 581 - 587

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