MEASUREMENT OF 1.3 AND 1.55 MU-M GAIN-SWITCHED SEMICONDUCTOR-LASER PULSES WITH A PICOSECOND IR STREAK CAMERA AND A HIGH-SPEED INGAAS PIN PHOTODIODE

被引：12

作者：

LIN, C

BOWERS, JE

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 25-2期

关键词：

D O I：

10.1049/el:19850847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1200 / 1202

页数：3

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