DLTS STUDY OF RIE-INDUCED DEEP LEVELS IN SI USING P+N DIODE-ARRAYS

被引：30

作者：

WATANABE, MO

TAGUCHI, M

KANZAKI, K

ZOHTA, Y

机构：

[1] TOSHIBA CORP,SEMICOND DEVICE ENGN LAB,KAWASAKI 210,JAPAN

[2] TOSHIBA CORP,DIV SEMICOND,KAWASAKI 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 02期

关键词：

D O I：

10.1143/JJAP.22.281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：281 / 286

页数：6

共 13 条

[1] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J].

EPHRATH, LM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1419-1421

[2]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[3] THE PROPERTIES OF IRON IN SILICON [J].

GRAFF, K ;

PIEPER, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :669-674

[4]

HERTKE JL, 1968, J APPL PHYS, V39, P4871

[5] CL2-AR PLASMA-ETCHING OF A CONTAMINATED LAYER ON SI INDUCED BY FLUOROCARBON GAS PLASMA [J].

HORIIKE, Y ;

SUGAWARA, T ;

OKANO, H ;

SHIBAGAKI, M ;

UEDA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :803-804

[6] OXYGEN-RELATED DONOR STATES IN SILICON [J].

KIMERLING, LC ;

BENTON, JL .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :410-412

[7]

KIMERLING LC, 1981, I PHYS C SER, V59, P217

[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[9]

MILNES AG, 1973, DEEP IMPURITIES SEMI, P99

[10] STUDY OF DRY ETCHING-RELATED CONTAMINATIONS ON SI AND SIO2 [J].

OSHIMA, M .

SURFACE SCIENCE, 1979, 86 (JUL) :858-865

← 1 2 →