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STUDY OF DRY ETCHING-RELATED CONTAMINATIONS ON SI AND SIO2

被引：35
作者：
OSHIMA, M
机构：
[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo
来源：
SURFACE SCIENCE | 1979年 / 86卷 / JUL期
关键词：
D O I：
10.1016/0039-6028(79)90468-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A study has been made of the surface chemistry of Si and SiO2 subjected to dry etching. The surface contamination layer was about 20-30 Å thick as determined by SIMS and AES sputter profile analyses. XPS data indicate that SiO2 surfaces are less contaminated with F and C than is Si, because the oxygen atoms disassociated from the SiO2 surface play a part in the removal of residual carbon. Annealing at over 600°C removed the F and C surface contaminations and the sheet resistivity was restored to the original value. © 1979.
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页码：858 / 865
页数：8
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