AUGER-ELECTRON SPECTROSCOPY OF CLEANUP-RELATED CONTAMINATION ON SILICON SURFACES

被引：26

作者：

YANG, MG

KOLIWAD, KM

MCGUIRE, GE

机构：

[1] TEXAS INSTR INC,SEMICONDUCTOR RES & DEV LAB,DALLAS,TX 75222

[2] TEXAS INSTR INC,CENT RES LAB,DALLAS,TX 75222

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 05期

关键词：

D O I：

10.1149/1.2134290

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：675 / 678

页数：4

共 12 条

[1] The effect of a photoelectric compound [J].

Auger, P .

JOURNAL DE PHYSIQUE ET LE RADIUM, 1925, 6 :205-U12

[2]

CHANG CC, 1970, SURFACE SCI, V23, P293

[3]

FARNSWORTH HE, 1959, J PHYS CHEM SOLIDS, V8, P116

[4] ANALYSIS OF MATERIALS BY ELECTRON-EXCITED AUGER ELECTRONS [J].

HARRIS, LA .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1419-&

[5] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY [J].

HENDERSON, RC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :772-+

[6]

JOYCE BA, 1970, SURFACE SCI, V23, P283

[7] GERMANIUM SURFACE CLEANING - AUGER ANALYSIS [J].

KIEWIT, DA ;

DHAENENS, IJ ;

ROTH, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (02) :310-311

[8]

LAM D, COMMUNICATION

[9] AUGER PEAKS IN THE ENERGY SPECTRA OF SECONDARY ELECTRONS FROM VARIOUS MATERIALS [J].

LANDER, JJ .

PHYSICAL REVIEW, 1953, 91 (06) :1382-1387

[10]

PALMBERG PW, 1972, HDB AUGER SPECTROSCO

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