DEEP LEVELS IN WIDE BAND-GAP III-V-SEMICONDUCTORS

被引：40

作者：

NEUMARK, GF

KOSAI, K

机构：

[1] Philips Laboratories Briarcliff, Manor, NY, United States

来源：

关键词：

D O I：

10.1016/S0080-8784(08)60274-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

390

引用

页码：1 / 74

页数：74

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[4]

ABAGYAN SA, 1976, SOV PHYS SEMICOND+, V10, P1056

[5]

ABAGYAN SA, 1975, SOV PHYS SEMICOND+, V8, P1096

[6]

ABAKUMOV VN, 1978, SOV PHYS SEMICOND+, V12, P1

[7] MULTIPHONON PROCESSES IN THE MODEL OF HENRY AND LANG [J].

ABRAM, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (27) :L753-L755

[8]

Allen J. W., 1980, Semi-Insulating III-V Materials, P261

[9]

Amato M. A., 1980, Semi-Insulating III-V Materials, P249

AMATO, MA ;

RIDLEY, BK .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (10) :2027-2039