DEEP LEVELS IN WIDE BAND-GAP III-V-SEMICONDUCTORS

被引：40

作者：

NEUMARK, GF

KOSAI, K

机构：

[1] Philips Laboratories Briarcliff, Manor, NY, United States

来源：

SEMICONDUCTORS AND SEMIMETALS | 1983年 / 19卷 / 0C期

关键词：

D O I：

10.1016/S0080-8784(08)60274-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

390

引用

页码：1 / 74

页数：74

共 385 条

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