DEEP LEVEL TRANSIENT SPECTROSCOPY FOR DIODES WITH LARGE LEAKAGE CURRENTS

被引：8

作者：

DAY, DS ^{[1
]}

HELIX, MJ ^{[1
]}

HESS, K ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1979年 / 50卷 / 12期

关键词：

D O I：

10.1063/1.1135761

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A Deep Level Transient Spectroscopy (DLTS) system is described for measuring deep levels in diodes exhibiting large leakage currents. A capacitance bridge employing the diode to be tested along with a dummy diode of similar characteristics is used. The DLTS spectrum of a leaky GaAs planar diode is measured and compared to experimental results obtained with two standard DLTS systems. It is shown that measurements with the standard systems are impossible in certain temperature ranges because of overloading problems. The approach described here, however, gives the DLTS spectrum between 77° and 300° K.

引用

页码：1571 / 1573

页数：3