DEEP-LEVEL-TRANSIENT SPECTROSCOPY - SYSTEM EFFECTS AND DATA-ANALYSIS

被引:77
作者
DAY, DS
TSAI, MY
STREETMAN, BG
LANG, DV
机构
[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.326665
中图分类号
O59 [应用物理学];
学科分类号
摘要
Studies of typical DLTS systems using either the dual-channel boxcar averager or the lock-in amplifier techniques are presented. The effects of nonzero gate width for the boxcar averager, phase angle adjustment for the lock-in amplifier, and response time of a typical commercial capacitance meter are investigated. Errors introduced in the measurements by these effects are calculated for typical cases. Measurements of the gold donor level in silicon are presented, along with calculated corrections. We find the corrections to be minimal in the boxcar-averager method, but significant in the lock-in amplifier approach.
引用
收藏
页码:5093 / 5098
页数:6
相关论文
共 5 条
[1]   NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS [J].
KIMERLING, LC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1497-1505
[2]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[3]   CAPACITANCE TRANSIENT SPECTROSCOPY [J].
MILLER, GL ;
LANG, DV ;
KIMERLING, LC .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448
[4]   CORRELATION METHOD FOR SEMICONDUCTOR TRANSIENT SIGNAL MEASUREMENTS [J].
MILLER, GL ;
RAMIREZ, JV ;
ROBINSON, DAH .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2638-2644
[5]  
SCHOTT JT, 1976, AFCRLTR760024 AIR FO