STRUCTURE AND CHEMICAL-COMPOSITION OF RF-SPUTTERED BORON-NITRIDE FILMS

被引：21

作者：

ROTHER, B

WEISSMANTEL, C

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 87卷 / 02期

关键词：

D O I：

10.1002/pssa.2210870242

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K119 / K121

页数：3

共 7 条

[1] BUCKLEY DH, 1978, ASLE TRANS, V21, P118, DOI 10.1080/05698197808982867
[2] PINSKER ZG, 1953, ELECTRON DIFFRACTION, P154
[3] ROTHER B, Patent No. 2589541
[4] LOW-TEMPERATURE DOUBLE-PLASMA PROCESS FOR BN FILMS ON SEMICONDUCTORS
SCHMOLLA, W
HARTNAGEL, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2636 - 2637
[5] THOMAS J, 1963, J AM CHEM SOC, V84, P4619
[6] WEISSMANTEL C, 1984, UNPUB FILM FORMATION
[7] RADIO-FREQUENCY SPUTTER DEPOSITED BORON-NITRIDE FILMS
WIGGINS, MD
AITA, CR
HICKERNELL, FS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 322 - 325