QUANTITATIVE-DETERMINATION OF HIGH-TEMPERATURE OXYGEN MICROPRECIPITATES IN CZOCHRALSKI SILICON BY MICRO-FOURIER TRANSFORM INFRARED-SPECTROSCOPY

被引：14

作者：

BORGHESI, A ^{[1
]}

GEDDO, M ^{[1
]}

PIVAC, B ^{[1
]}

SASSELLA, A ^{[1
]}

STELLA, A ^{[1
]}

机构：

[1] RUDJER BOSKOVIC INST, YU-41000 ZAGREB, CROATIA

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 19期

关键词：

D O I：

10.1063/1.104999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen content in the bulk of Czochralski silicon was analyzed by using micro-Fourier transform infrared spectroscopy in a transversal wafer cross-section configuration. This technique locally distinguishes between interstitial oxygen and oxygen precipitates in wafers used as substrates for epitaxial layer growth. Systematic measurements performed in the 5000-700 cm-1 wavenumber range clearly indicate the presence of oxygen microprecipitates in the bulk of the processed silicon wafers. Quantitative determination of oxygen precipitate density is reported and compared with the measured interstitial oxygen concentration.

引用

页码：2099 / 2101

页数：3

共 23 条

[1]

BULLIS WM, 1983, DEFECTS SILICON, P285

[2] OPTICAL DETERMINATION OF OXYGEN OUTDIFFUSION IN EPITAXIAL SILICON GROWN ON N-TYPE CZOCHRALSKI SUBSTRATES [J].