STRUCTURAL-CHANGES IN A-SI-H DURING ANNEALING

被引：7

作者：

VANDENBOOGAARD, MJ

VANDERREE, BGC

MEILING, H

SCHROPP, REI

VANDERWEG, WF

机构：

[1] Dept. of Atomic and Interface Physics, Debye Institute, Utrecht University, NL-3508 TA Utrecht

来源：

PHYSICA B | 1991年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90139-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Annealing experiments on undoped glow-discharge a-Si:H films deposited both from undiluted SiH4 and from a SiH4/H-2 mixture, show that annealing after deposition is a more effective way to improve the structure than an increase in deposition temperature, at least in cases when considerable numbers of (SiH2)n polymers are created during deposition.

引用

页码：281 / 284

页数：4

共 10 条

[1]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J].