QUANTUM-WELL GAAS/ALGAAS DIODE-LASERS GROWN IN A PLANET OMVPE REACTOR

For the first time optoelectronic devices grown in a PLANET OMVPE reactor at low pressure have been realized. In the PLANET reactor seven 2 inch wafers can be grown simultaneously in a single growth run. Due to the unique wafer rotation mechanism, identical epilayers over all wafers result. Homogeneity in layer thickness and composition as well as the material quality is discussed. We have optimized quantum well diode laser structures with respect to their application for optical data storage. The results of these investigations demonstrate the usefulness of this reactor as production equipment for GaAs/AlGaAs diode lasers.