DENSITY OF AS-DEPOSITED AND ANNEALED THIN SILICON-NITRIDE FILMS

被引:11
作者
BRUYERE, JC [1 ]
SAVALL, C [1 ]
REYNES, B [1 ]
BRUNEL, M [1 ]
ORTEGA, L [1 ]
机构
[1] UNIV JOSEPH FOURIER,CRISTALLOG LAB,F-38042 GRENOBLE 9,FRANCE
关键词
D O I
10.1088/0022-3727/26/4/029
中图分类号
O59 [应用物理学];
学科分类号
摘要
Density measurements of PECVD hydrogenated silicon nitride films, Si(x)N(y)H(z), are reponed. Two methods are investigated: the critical angle of reflection of x rays and direct calculations with atomic composition deduced from infrared chemical bond analysis. Two kinds of sample are studied: as-deposited films with different atomic compositions and films with given composition post-annealed up to 1000-degrees-C. On the first kind of sample both methods confirm the increase of density of the films when they are prepared in nitrogen-rich plasma. Moreover, from x-ray measurements, we deduce a maximum density of 3 +/- 0.1, dose to the high-temperature CVD silicon nitride value. In the second kind of sample, no significant change is observed in the specific mass, and this agrees with stability properties of the low-hydrogen-content almost stoichiometric silicon nitride reported recently.
引用
收藏
页码:713 / 716
页数:4
相关论文
共 18 条
[1]   PLASMA-ENHANCED CVD OF HIGH-QUALITY INSULATING FILMS [J].
BATEY, J ;
TIERNEY, E ;
STASIAK, J ;
NGUYEN, TN .
APPLIED SURFACE SCIENCE, 1989, 39 (1-4) :1-15
[2]   ANNEALING OF SILICON-NITRIDE THIN-FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION WITH HELIUM DILUTION [J].
BRUYERE, JC ;
REYNES, B ;
SAVALL, C ;
ROCH, C .
THIN SOLID FILMS, 1992, 221 (1-2) :65-71
[3]  
CLASSEN WAP, 1985, J ELECTROCHEM SOC, V132, P893
[4]  
Compton A. H., 1963, XRAYS THEORY EXPT
[5]   The total reflexion of X-rays [J].
Compton, AH .
PHILOSOPHICAL MAGAZINE, 1923, 45 (270) :1121-1131
[6]  
CROS Y, 1992, COMMUNICATION
[7]   STUDY OF SELF-IMPLANTED SILICON AMORPHIZATION WITH X-RAYS AT GRAZING ANGLES OF INCIDENCE [J].
GILLES, B ;
BRUNEL, M .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 44 (03) :331-335
[8]   SILICON-NITRIDE PRODUCED BY CATALYTIC CHEMICAL VAPOR-DEPOSITION METHOD [J].
MATSUMURA, H .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) :3612-3617
[9]   CHARACTERIZATION OF SURFACES BY GRAZING X-RAY REFLECTION - APPLICATION TO STUDY OF POLISHING OF SOME SILICATE-GLASSES [J].
NEVOT, L ;
CROCE, P .
REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03) :761-779
[10]   LOW HYDROGEN CONTENT STOICHIOMETRIC SILICON-NITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
PARSONS, GN ;
SOUK, JH ;
BATEY, J .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) :1553-1560