SILICON-NITRIDE PRODUCED BY CATALYTIC CHEMICAL VAPOR-DEPOSITION METHOD

被引：78

作者：

MATSUMURA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3612 / 3617

页数：6

共 11 条

[1] DEPOSITING SILICON NITRIDE LAYERS AT LOW TEMPERATURE USING A PHOTOCHEMICAL REACTION [J].

COLLET, MG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :110-&

[2] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J].

FAIR, RB ;

SUN, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) :83-94

[3]

JONES K, 1973, COMPREHENSIVE INORGA, V6, P250

[4] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

LANFORD, WA ;

RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477

[5] HYDROGEN-BONDING CONFIGURATIONS IN SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J].

MAEDA, M ;

NAKAMURA, H .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :484-489

[6] HIGH-QUALITY AMORPHOUS-SILICON GERMANIUM PRODUCED BY CATALYTIC CHEMICAL VAPOR-DEPOSITION [J].

MATSUMURA, H .

APPLIED PHYSICS LETTERS, 1987, 51 (11) :804-805

[7] CATALYTIC CHEMICAL VAPOR-DEPOSITION (CTL-CVD) METHOD PRODUCING HIGH-QUALITY HYDROGENATED AMORPHOUS-SILICON [J].

MATSUMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12) :L949-L951

[8]

Matsumura H., 1985, 18TH P IEEE PHOT SPE, P1277

[9]

MATSUMURA H, 1989, J APPL PHYS, V5, P4396

[10] LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA [J].

MATSUO, S ;

KIUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04) :L210-L212

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