PULSED-LASER DEPOSITION OF ORIENTED IN2O3 ON (001) INAS, MGO, AND YTTRIA-STABILIZED ZIRCONIA

被引：90

作者：

TARSA, EJ

ENGLISH, JH

SPECK, JS

机构：

[1] Materials Department, University of California, Santa Barbara

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期

关键词：

D O I：

10.1063/1.109408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oriented In2O3 films have been grown on (001) InAs, MgO, and YSZ substrates using pulsed laser deposition. The films in each case displayed a cube-on-cube orientation relation with respect to the substrate, as determined by in situ RHEED analysis and x-ray theta-2theta measurements. X-ray rocking curve full width at half-maximum values as low as 1.3-degrees, 1.5-degrees, and 0.29-degrees have been obtained for In2O3 layers on InAs, MgO, and YSZ, respectively. An oriented native surface oxide layer was employed to provide an appropriate epitaxial template for aligned growth of In2O3 on InAs substrates, while growths were carried out directly on MgO and YSZ. The not intentionally doped films displayed resistivities on the order of 10(-4) OMEGA cm, with Hall mobilities of 50 cm 2/V S measured for In2O3 deposited on YSZ substrates.

引用

页码：2332 / 2334

页数：3

共 20 条

[1] EPITAXIAL-GROWTH AND PROPERTIES OF YBA2CU3OX-PB(ZR0.6TI0.4)O3-YBA2CU3OX TRILAYER STRUCTURE BY LASER ABLATION [J].