MGO EPITAXIAL THIN-FILMS ON (100) GAAS AS A SUBSTRATE FOR THE GROWTH OF ORIENTED PBTIO3

被引:86
作者
HSU, WY
RAJ, R
机构
[1] Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca
关键词
D O I
10.1063/1.106766
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial MgO thin films were grown on (100) GaAs substrates by reactive rf magnetron sputtering. Coupled x-ray diffraction, off-axis phi-scan, and transmission electron microscopy indicated in-plane alignment of the MgO film with the GaAs substrate such that MgO[100] parallel-to GaAs[100]. PbTiO3 ferroelectric thin films, grown on this MgO surface, were found to be oriented with PbTiO3{100} parallel-to MgO (001) parallel-to GaAs (001) and PbTiO3 [100] parallel-to MgO[100] parallel-to GaAs[100].
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页码:3105 / 3107
页数:3
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