WIDE OPTICAL-GAP A-SI-O-H FILMS PREPARED FROM SIH4-CO2 GAS-MIXTURE

被引：38

作者：

HAGA, K ^{[1
]}

YAMAMOTO, K ^{[1
]}

KUMANO, M ^{[1
]}

WATANABE, H ^{[1
]}

机构：

[1] SENDAI NATL COLL TECHNOL,MIYAGI 98931,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 01期

关键词：

GLOW DISCHARGES - Applications - HYDROGEN - OXYGEN - PHOTOCONDUCTIVITY - Measurements - PHOTODETECTORS - Materials;

D O I：

10.1143/JJAP.25.L39

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon oxygen alloy films (a-Si:O:H) with wide optical-gap have been prepared by rf glow discharge decomposition of CO//2 and SiH//4 gas mixture. The optical-gap increases monotonically from 1. 76 ev to 2. 43 ev with increasing molar fraction of CO//2 to SiH//4 in the gas phase. A high photoconductivity of 4. 1 multiplied by 10** minus **9( OMEGA multiplied by (times) cm)** minus **1 is obtained for the films with the optical-gap of 2. 43 ev. Efficient doping is possible in these films and these properties suggest that the films are useful as window materials of photodetectors.

引用

页码：L39 / L41

页数：3

共 6 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].