SIMULATIONS OF FABRICATED FIELD EMITTER STRUCTURES

被引：36

作者：

HONG, D ^{[1
]}

ASLAM, M ^{[1
]}

FELDMANN, M ^{[1
]}

OLINGER, M ^{[1
]}

机构：

[1] SMITH IND,GRAND RAPIDS,MI 49518

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Five different single field emitters and emitter arrays with flat or nonflat collector structures were selected from the literature to simulate the actual emitting area of the tip. The Poisson's equation was solved under two different assumptions of emitting behavior; uniform electron emission from the whole tip area, and electron emission from only small part of the tip area. It was observed that the geometry factor beta of an array is larger than that of a single emitter, which is believed to be partly responsible for exceedingly small computed value of emitting area alpha for multiemitter structures. Finite element analysis of single and multiemitter structures indicates that the large beta values are due to the interemitter interactions in an array.

引用

页码：764 / 769

页数：6

共 14 条

[1] FIELD-EMISSION FROM METAL-COATED SILICON TIPS [J].