HYDROGEN ANNEAL EFFECTS ON METAL-SEMICONDUCTOR WORK FUNCTION DIFFERENCE

被引：1

作者：

KRAUTSCHNEIDER, W

WAGEMANN, HG

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 12期

关键词：

D O I：

10.1149/1.2123722

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：2884 / 2885

页数：2

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