THERMAL-REACTION OF TI EVAPORATED ON GAAS

被引：52

作者：

WADA, O ^{[1
]}

YANAGISAWA, S ^{[1
]}

TAKANASHI, H ^{[1
]}

机构：

[1] FIJITSU LABS LTD,NAKAHARA KU,KAWASAKI,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 04期

关键词：

D O I：

10.1063/1.89039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：263 / 265

页数：3

相关论文

共 10 条

[1] INTERDIFFUSIONS IN THIN-FILM AU ON PT ON GAAS (100) STUDIES WITH AUGER-SPECTROSCOPY
CHANG, CC
MURARKA, SP
KUMAR, V
QUINTANA, G
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) : 4237 - 4243
[2] REACTION-RATES FOR PT ON GAAS
COLEMAN, DJ
WISSEMAN, WR
SHAW, DW
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (08) : 355 - 357
[3] GYULAI J, 1975, J APPL PHYS, V46, P4237
[4] KIM HB, 1975, 1974 P INT C GAAS RE, P307
[5] REACTION OF SPUTTERED PT FILMS ON GAAS
KUMAR, V
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (06) : 535 - 541
[6] FORWARD IV CHARACTERISTICS OF PT-N-GAAS SCHOTTKY-BARRIER CONTACTS
MURARKA, SP
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (09) : 985 - 991
[7] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT
SINHA, AK
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 666 - 668
[8] SINTERED OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS
SINHA, AK
SMITH, TE
LEVINSTEIN, HJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 218 - 224
[9] SINHA AK, 1975, APPL PHYS LETT, V24, P171
[10] SZE SM, 1969, PHYSICS SEMICONDUCTO