RAPID-THERMAL-OXIDIZED POROUS SI - THE SUPERIOR PHOTOLUMINESCENT SI

被引：381

作者：

PETROVAKOCH, V ^{[1
]}

MUSCHIK, T ^{[1
]}

KUX, A ^{[1
]}

MEYER, BK ^{[1
]}

KOCH, F ^{[1
]}

LEHMANN, V ^{[1
]}

机构：

[1] SIEMENS RES LABS,W-8000 MUNICH,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.107736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To improve the stability of porous Si (PS) prepared by electrochemical etching, we make use of rapid-thermal oxidation (RTO). During RTO processing, the hydride coverage of the internal surfaces of the pores is replaced by a high-quality oxide while retaining nm-sized Si grains. With increasing process temperature T(ox) the luminescence is first quenched. It is recovered with comparable intensity for T(ox) greater-than-or-equal-to 700-degrees-C.

引用

页码：943 / 945

页数：3