GENERALIZED THEORY FOR ANALYTICAL SIMULATION OF THE STEADY-STATE PHOTOCARRIER GRATING TECHNIQUE

被引：15

作者：

ABEL, CD

BAUER, GH

BLOSS, WH

机构：

[1] UNIV OLDENBURG,FACHBEREICH PHYS,D-26111 OLDENBURG,GERMANY

[2] UNIV STUTTGART,INST PHYS ELEKTR,D-70569 STUTTGART,GERMANY

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1995年 / 72卷 / 05期

关键词：

D O I：

10.1080/13642819508239105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The steady-state photocarrier grating technique has become a valuable method for determining minority-carrier mu tau products of amorphous semiconductors. Here we introduce a generalized theory which is not apriori based on ambipolar transport and which describes the influence of the external electric field besides the grating period on the deduced coefficient beta. The coefficient beta is a measure of the change in the photocurrent with the appearance of the grating in the photogeneration rate. This novel analytical approach is verified by numerical simulations and is successfully applied to experimental data. More insight is gained into the transport processes in amorphous semiconductors which are of substantial importance for amorphous solar cells.

引用

页码：551 / 562

页数：12

共 22 条

[1]

Abel C.-D., 1993, Progress in Photovoltaics: Research and Applications, V1, P269, DOI 10.1002/pip.4670010403

[2]

ABEL CD, 1992, MATER RES SOC S P, V258, P705

[3]

Balberg I., 1988, Applied Physics Letters, V53, P992, DOI 10.1063/1.100051

[4] IDENTIFICATION OF NONAMBIPOLAR TRANSPORT IN THE APPLICATION OF A PHOTOCARRIER GRATING TO HYDROGENATED AMORPHOUS-SILICON [J].