CHARACTERIZATION OF HIGH ELECTRONIC QUALITY A-SIC-H FILMS BY MU-TAU PRODUCTS FOR ELECTRONS AND HOLES

被引:18
作者
MOHRING, HD
ABEL, CD
BRUGGEMANN, R
BAUER, GH
机构
[1] Inst. für Physikalische Elektronik, Universität Stuttgart, D-7000 Stuttgart 80
关键词
D O I
10.1016/S0022-3093(05)80252-2
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Intrinsic a-SiC:H films with optical bandgaps E(g) less-than-or-equal-to 2.0 eV have been optimized with respect to minimum PDS Urbach energy E0. We demonstrate that the increasing density of midgap defects induced by C incorporation controls AM1 photoconductivity at room temperature whereas the low temperature photoconductivity is governed by additionally generated conduction band tail states.
引用
收藏
页码:847 / 850
页数:4
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