PHOTOCONDUCTIVITY AND MU-TAU-PRODUCTS IN A-SI-H - COMPATIBILITY WITH VARIOUS DEFECT MODELS

被引：27

作者：

SCHUMM, G

ABEL, CD

BAUER, GH

机构：

[1] Inst. für Physikalische Elektronik, Universität Stuttgart, D-7000 Stuttgart 80

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80128-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of different gap state distributions on sigma-pc and mu-tau has been investigated by computer simulations and compared to experimental results. It is generally found that experimental data of high-quality a-Si:H are better fitted using a defect pool based gap state distribution with two uncorrelated charged defect levels compared to the standard defect model with one level of D(o) states and a correlated level of D- states.

引用

页码：351 / 354

页数：4

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