PHOTOCONDUCTIVITY AND LIGHT-INDUCED CHANGE IN A-SI-H

[1] LIGHT-INDUCED EFFECTS IN AMORPHOUS-SILICON MATERIAL AND DEVICES [J]. SOLAR CELLS, 1983, 9 (1-2): : 19 - 23

[2] RECOMBINATION PROCESSES IN A-SI-H - SPIN-DEPENDENT PHOTOCONDUCTIVITY [J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4678 - 4684

[3] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458

[4] PHOTOCONDUCTIVITY AND RECOMBINATION IN AMORPHOUS-SILICON ALLOYS [J]. PHYSICAL REVIEW B, 1984, 30 (12): : 6991 - 6999

[5] STUDY OF LIGHT-INDUCED CREATION OF DEFECTS IN A-SI-H BY MEANS OF SINGLE AND DUAL-BEAM PHOTOCONDUCTIVITY [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 397 - 400

[6] HAN D, 1984, AIP C P, V120, P296

[7] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016

[8] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562

[9] OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 474 - 476

[10] LIGHT-INDUCED CHANGE IN A-SI-H MATERIAL AND P-I-N DEVICES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 409 - 412

[1] LIGHT-INDUCED EFFECTS IN AMORPHOUS-SILICON MATERIAL AND DEVICES [J]. SOLAR CELLS, 1983, 9 (1-2): : 19 - 23

[2] RECOMBINATION PROCESSES IN A-SI-H - SPIN-DEPENDENT PHOTOCONDUCTIVITY [J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4678 - 4684

[3] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458

[4] PHOTOCONDUCTIVITY AND RECOMBINATION IN AMORPHOUS-SILICON ALLOYS [J]. PHYSICAL REVIEW B, 1984, 30 (12): : 6991 - 6999

[5] STUDY OF LIGHT-INDUCED CREATION OF DEFECTS IN A-SI-H BY MEANS OF SINGLE AND DUAL-BEAM PHOTOCONDUCTIVITY [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 397 - 400

[6] HAN D, 1984, AIP C P, V120, P296

[7] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016

[8] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562

[9] OBSERVATION OF PHOTOINDUCED CHANGES IN THE BULK-DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 474 - 476

[10] LIGHT-INDUCED CHANGE IN A-SI-H MATERIAL AND P-I-N DEVICES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 409 - 412