DEFECTS AND RECOMBINATION IN A-SI1-XCX-H FILMS

被引：38

作者：

LIEDTKE, S

JAHN, K

FINGER, F

FUHS, W

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(87)90260-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1083 / 1086

页数：4

共 10 条

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[3] GLOW-DISCHARGE A-SI1-XCX - H FILMS STUDIED BY ELECTRON-SPIN-RESONANCE AND IR MEASUREMENTS
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MIURA, T
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[4] DEFECTS IN HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY-FILMS PREPARED BY GLOW-DISCHARGE DECOMPOSITION AND SPUTTERING
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MIURA, T
KUMEDA, M
SHIMIZU, T
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7299 - 7305
[5] ELECTRONIC AND ATOMIC-STRUCTURE OF AMORPHOUS-CARBON
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[6] PHOTOLUMINESCENCE IN A-SI1-XCX-H FILMS
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FUHS, W
JAHN, K
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1987, 140 (01): : 311 - 321
[7] OPTICAL-PROPERTIES AND STRUCTURE OF SI1-XCX-H ALLOYS
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WEISER, G
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 92 (01) : 95 - 106
[8] STREET RA, 1981, ADV PHYS, V30, P596
[9] LUMINESCENCE IN PLASMA DEPOSITED AMORPHOUS SIXC1-X ALLOYS
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[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 1029 - 1032
[10] WATANABE J, 1985, JP J APPL PHYS, V24, pL122