EPITAXIAL-GROWTH OF CU2O FILMS ON MGO BY SPUTTERING

被引：15

作者：

MILLER, DJ ^{[1
]}

HETTINGER, JD ^{[1
]}

CHIARELLO, RP ^{[1
]}

KIM, HK ^{[1
]}

机构：

[1] PUSAN NATL UNIV,DEPT PHYS,PUSAN,SOUTH KOREA

来源：

JOURNAL OF MATERIALS RESEARCH | 1992年 / 7卷 / 10期

关键词：

D O I：

10.1557/JMR.1992.2828

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The epitaxial growth of Cu2O films is of significant interest for the unique po offer in the development of multilayer devices and superlattices. While fundamental studies may be carried out on epitaxial films prepared by any technique, the growth of artificially layered superlattices requires that films grow epitaxially during deposition. The present study examined the growth Of Cu2O on MgO substrates directly during deposition by sputtering. Although epitaxial thin films Of Cu2O could be produced, a mosaic structure was observed. The structure of the film may be related to the growth mechanism in which islands coalesce to form a continuous film.

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页码：2828 / 2832

页数：5

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