DIAMOND GROWTH ON CARBIDE SURFACES USING A SELECTIVE ETCHING TECHNIQUE

Microwave plasma-enhanced chemical vapor deposition of diamond films on silicon carbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pretreatment is necessary to grow these films with a (100) faceted surface morphology. The diamond films are characterized by scanning electron microscopy and Raman spectroscopy. The proposed nucleation and growth mechanism involves etching of the noncarbon component of the carbide by atomic fluorine to expose surface carbon atoms and diamond nucleation and growth on these exposed carbon atoms. Hydrogen is necessary in the growth process to limit the rapid etching of the carbide substrates by corrosive fluorine atoms.