PRESSURE EFFECTS IN GA (AS1-XPX) ELECTROLUMINESCENT DIODES1 ) GA )AS1-XPX) LASER DIODES EFFICIENCY OF LUMINESCENCE EFFECT OF PRESSURE ON 0-6000 ATM AT 77 DEGREES K E )

被引：19

作者：

FULTON, TA

FITCHEN, DB

FENNER, GE

机构：

来源：

APPLIED PHYSICS LETTERS | 1964年 / 4卷 / 01期

关键词：

D O I：

10.1063/1.1723582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：9 / &

共 11 条

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GROVES, S ;

PAUL, W ;

ZALLEN, R .

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[5]

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[7]

HALL RN, 1963, IEEE T ELECTRON DEVI, P334

[8] COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS [J].

HOLONYAK, N ;

BEVACQUA, SF .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :82-83

[9] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J].

NELSON, DF ;

GERSHENZON, M ;

ASHKIN, A .

APPLIED PHYSICS LETTERS, 1963, 2 (09) :182-184

[10] BAND STRUCTURE OF INTERMETALLIC SEMICONDUCTORS FROM PRESSURE EXPERIMENTS [J].

PAUL, W .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2082-&

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