PRESSURE EFFECTS IN GA (AS1-XPX) ELECTROLUMINESCENT DIODES1 ) GA )AS1-XPX) LASER DIODES EFFICIENCY OF LUMINESCENCE EFFECT OF PRESSURE ON 0-6000 ATM AT 77 DEGREES K E )

被引:19
作者
FULTON, TA
FITCHEN, DB
FENNER, GE
机构
关键词
D O I
10.1063/1.1723582
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:9 / &
相关论文
共 11 条
[1]   THE EFFECT OF PRESSURE ON ZINC BLENDE AND WURTZITE STRUCTURES [J].
EDWARDS, AL ;
SLYKHOUSE, TE ;
DRICKAMER, HG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (1-2) :140-148
[2]   BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].
EHRENREICH, H .
PHYSICAL REVIEW, 1960, 120 (06) :1951-1963
[3]   EFFECT OF PRESSURE ON SPONTANEOUS AND STIMULATED EMISSION FROM GAAS [J].
FEINLEIB, J ;
GROVES, S ;
PAUL, W ;
ZALLEN, R .
PHYSICAL REVIEW, 1963, 131 (05) :2070-&
[4]   EFFECT OF HYDROSTATIC PRESSURE ON EMISSION FROM GALLIUM ARSENIDE LASERS [J].
FENNER, GE .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) :2955-&
[5]  
FENNER GE, TO BE PUBLISHED
[7]  
HALL RN, 1963, IEEE T ELECTRON DEVI, P334
[8]   COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS [J].
HOLONYAK, N ;
BEVACQUA, SF .
APPLIED PHYSICS LETTERS, 1962, 1 (04) :82-83
[9]   BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J].
NELSON, DF ;
GERSHENZON, M ;
ASHKIN, A .
APPLIED PHYSICS LETTERS, 1963, 2 (09) :182-184