THE MECHANISM OF (HG,CD)TE ANODIC-OXIDATION

被引：48

作者：

JANOUSEK, BK

CARSCALLEN, RC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 03期

关键词：

D O I：

10.1063/1.331639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1720 / 1726

页数：7

共 27 条

[1]

BARD AJ, 1966, CHEM EQUILIBRIUM, P189

[2] STABLE CHARGE STORAGE OF MAOS DIODES ON GAAS BY NEW ANODIC-OXIDATION [J].

BAYRAKTAROGLU, B ;

HANNAH, SJ ;

HARTNAGEL, HL .

ELECTRONICS LETTERS, 1977, 13 (02) :45-46

[3]

BOCKRIS JO, 1970, MODERN ELECTROCHEMIS, P1316

[4]

BOCKRIS JO, 1970, MODERN ELECTROCHEMIS, P296

[5]

BOCKRIS JO, 1970, MODERN ELECTROCHEMIS, P1321

[6]

CATAGNUS PC, 1976, Patent No. 3977018

[7] HIGH-PERFORMANCE BACKSIDE-ILLUMINATED HG0.78CD0.22TE-CDTE(LAMBDA-CO=10-MU-M) PLANAR DIODES [J].

CHU, M ;

VANDERWYCK, AHB ;

CHEUNG, DT .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :486-488

[8] MECHANISM OF GAAS ANODIZATION [J].

COLEMAN, DJ ;

SHAW, DW ;

DOBROTT, RD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :239-241

[9]

DAVIS GD, 1981, SPIE P, V285, P126

[10] SURFACE STUDIES ON SINGLE-CRYSTAL GERMANIUM [J].

ELLIS, SG .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) :1262-1269

← 1 2 3 →