THEORY OF ISOCONCENTRATION DIFFUSION IN SEMICONDUCTORS

被引：15

作者：

ANTONCIK, E

机构：

[1] Institute of Physics and Astronomy, University of Aarhus

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 09期

关键词：

D O I：

10.1149/1.2048706

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A simple theory of isoconcentration and concentration-gradient dopant diffusion in semiconductors is formulated, giving two different effective diffusion coefficients. It is shown that while in the former case the high value of D-eff is due to the fact that the sample is predoped at the concentration equal to the solubility limit for the dopant in question, in the latter case a simple D-eff depending on the local donor/acceptor density is obtained. As an illustration both the isoconcentration diffusion of phosphorus and its diffusion in intrinsic silicon are discussed in detail. The great importance of measurements of isoconcentration D-eff for the theory of dopant diffusion in semiconductors is emphasized.

引用

页码：3170 / 3173

页数：4