TOTAL-ENERGY GRADIENTS AND LATTICE-DISTORTIONS AT POINT-DEFECTS IN SEMICONDUCTORS

被引：118

作者：

SCHEFFLER, M

VIGNERON, JP

BACHELET, GB

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER

[2] FAC NOTRE DAME PAIX, DEPT PHYS, B-5000 NAMUR, BELGIUM

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.31.6541

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6541 / 6551

页数：11

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