DIFFERENCE-FREQUENCY MIXING IN AGGAS2 BY USE OF A HIGH-POWER GAALAS TAPERED SEMICONDUCTOR AMPLIFIER AT 860 NM

被引：32

作者：

SIMON, U ^{[1
]}

TITTEL, FK ^{[1
]}

GOLDBERG, L ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

OPTICS LETTERS | 1993年 / 18卷 / 22期

关键词：

D O I：

10.1364/OL.18.001931

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

As much as 47 muW of cw infrared radiation and 89 muW of pulsed infrared radiation, tunable near 4.3 mum, have been generated by mixing the outputs of a high-power tapered semiconductor amplifier at 858 nm (signal wave) and a Ti:Al2O3 laser at 715 nm (pump wave) in AgGaS2. The GaAlAs tapered traveling-wave amplifier delivered as much as 1.5 W of diffraction-limited cw power into the nonlinear crystal. Output powers, conversion efficiencies, and spectral characteristics of this novel midinfrared source are discussed.

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页码：1931 / 1933

页数：3

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