3.O-W BLUE-LIGHT GENERATION BY FREQUENCY-DOUBLING OF BROAD AREA SEMICONDUCTOR AMPLIFIER EMISSION

被引：8

作者：

BUSSE, LE

GOLDBERG, L

MEHUYS, D

MIZELL, G

机构：

[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134

[2] VIRGO OPT,PORT RICHEY,FL 34668

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 01期

关键词：

HARMONIC GENERATION; OPTICAL AMPLIFIERS; LASERS;

D O I：

10.1049/el:19930050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broad area GaAlAs amplifier emission is frequency doubled in a single pass through a 2 cm long KNbO3 crystal. A maximum peak power of 3.0 W at 432 nm is achieved with 15.6 W of incident fundamental power and 0.3 mus long pulses, corresponding to a 19% nonlinear conversion efficiency.

引用

页码：77 / 78

页数：2

共 5 条

[1] PARAMETRIC INTERACTION OF FOCUSED GAUSSIAN LIGHT BEAMS [J].