21-W BROAD AREA NEAR-DIFFRACTION-LIMITED SEMICONDUCTOR AMPLIFIER

被引：29

作者：

GOLDBERG, L ^{[1
]}

MEHUYS, D ^{[1
]}

机构：

[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 06期

关键词：

D O I：

10.1063/1.107830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 600-mu-m wide broad area single pass GaAlAs traveling wave amplifier emitted 21 W in pulsed operation. The far-field was dominated by a near-diffraction limited 0.08-degrees wide lobe, with 16 W measured in a 0.9-degrees angular aperture. Current dependent scattering of the output beam power to outside of the diffraction-limited lobe was observed.

引用

页码：633 / 635

页数：3

共 7 条

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GOLDBERG, L
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MEHUYS, D
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[J]. APPLIED PHYSICS LETTERS, 1992, 60 (11) : 1292 - 1294

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