TECHNIQUE FOR MEASURING FACET REFLECTIVITY AND EFFECTIVE INDEX OF LASER DIODE AMPLIFIERS

被引：6

作者：

GOLDBERG, L ^{[1
]}

TAMBURRINI, M ^{[1
]}

MEHUYS, D ^{[1
]}

机构：

[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 17期

关键词：

AMPLIFIERS; LASER DIODES; MEASUREMENT; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple method for unambiguous measurement of the effective index, single pass gain and residual facet reflectivity of semiconductor amplifiers is described. The technique relies on propagation of narrow beams injected at an angle into broad area semiconductor amplifier.

引用

页码：1593 / 1595

页数：3

共 5 条

[1] INJECTION BEHAVIOR AND MODELING OF 100-MW BROAD AREA DIODE-LASERS
ABBAS, GL
YANG, S
CHAN, VWS
FUJIMOTO, JG
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (04) : 609 - 617
[2] ANALYSIS OF ANTIREFLECTION COATINGS ON ANGLED FACET SEMICONDUCTOR-LASER AMPLIFIERS
FARRIES, MC
BUUS, J
ROBBINS, DJ
[J]. ELECTRONICS LETTERS, 1990, 26 (06) : 381 - 382
[3] 12-W BROAD AREA SEMICONDUCTOR AMPLIFIER WITH DIFFRACTION LIMITED OPTICAL OUTPUT
GOLDBERG, L
WELLER, JF
MEHUYS, D
WELCH, DF
SCIFRES, DR
[J]. ELECTRONICS LETTERS, 1991, 27 (11) : 927 - 929
[4] SEMICONDUCTOR-LASER OPTICAL AMPLIFIERS FOR USE IN FUTURE FIBER SYSTEMS
OMAHONY, MJ
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (04) : 531 - 544
[5] THEORETICAL-ANALYSIS AND FABRICATION OF ANTIREFLECTION COATINGS ON LASER-DIODE FACETS
SAITOH, T
MUKAI, T
MIKAMI, O
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (02) : 288 - 293

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