ELECTRICAL DETECTION OF ELECTRON-PARAMAGNETIC-RESONANCE - NEW POSSIBILITIES FOR THE STUDY OF POINT-DEFECTS

被引：44

作者：

STICH, B ^{[1
]}

GREULICHWEBER, S ^{[1
]}

SPAETH, JM ^{[1
]}

机构：

[1] UNIV GESAMTHSCH PADERBORN,FB6,D-33098 PADERBORN,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.358906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An investigation of the possibilities to measure electron paramagnetic resonance (EPR) with electrical detection (EDEPR) by measuring the microwave or radio frequency-induced change of the photoconductivity of various bulk Si samples containing shallow and deep level defects is presented. It was found that an electron-hole recombination mechanism via a donor (D0)- acceptor (A0) pair explains the observations and may be necessary if EDEPR is to be detected. A qualitative expression for the EDEPR signal intensity is presented. EDEPR offers sensitivity several orders of magnitude better than normal EPR. As few as 107 shallow P donors could be observed. In addition, EDEPR can be measured with spatial resolution allowing defect mapping. © 1995 American Institute of Physics.

引用

页码：1546 / 1553

页数：8

共 31 条

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