EVALUATION OF MOTTS PARAMETERS FOR HOPPING CONDUCTION IN AMORPHOUS GE, SI, AND SE-SI

被引：260

作者：

PAUL, DK ^{[1
]}

MITRA, SS ^{[1
]}

机构：

[1] UNIV RHODE ISL,DEPT ELECT ENGN,KINGSTON,RI 02881

来源：

PHYSICAL REVIEW LETTERS | 1973年 / 31卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.31.1000

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1000 / 1003

页数：4

共 19 条

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[2]

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[3]

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[4] RELATIONS BETWEEN STRUCTURE AND OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SI AND GE FILMS [J].

BRODSKY, MH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01) :125-&

[5] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH ;

TITLE, RS ;

WEISER, K ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[6]

Chittick R. C., 1970, J NON-CRYST SOLIDS, V3, P255

[7]

Connell G.A.N., 1972, J NONCRYST SOL, V8-10, P223

[8] HOPPING CONDUCTION IN AMORPHOUS SOLIDS [J].

HILL, RM .

PHILOSOPHICAL MAGAZINE, 1971, 24 (192) :1307-&

[9] EVIDENCE FOR MOTT MODEL OF HOPPING CONDUCTION IN ANNEAL STABLE STATE OF AMORPHOUS SILICON [J].

LEWIS, A .

PHYSICAL REVIEW LETTERS, 1972, 29 (23) :1555-&

[10] CORRECTION [J].

LEWIS, A .

PHYSICAL REVIEW LETTERS, 1973, 30 (24) :1238-1238

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