METAL-INDUCED EXTRINSIC SURFACE STATES ON SI, GE, AND GAAS

被引:6
作者
ROWE, JE [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 01期
关键词
D O I
10.1116/1.568860
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:248 / 250
页数:3
相关论文
共 15 条
[1]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[2]   SIMPLIFIED SELF-CONSISTENT MODEL FOR IMAGE FORCE AND INTERFACE CHARGE IN SCHOTTKY BARRIERS [J].
CROWELL, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :951-957
[3]   RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].
EASTMAN, DE ;
FREEOUF, JL .
PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1624-1627
[4]   THEORY OF SURFACE STATES [J].
HEINE, V .
PHYSICAL REVIEW, 1965, 138 (6A) :1689-&
[5]   MANY-BODY EFFECTS AT METAL-SEMICONDUCTOR JUNCTIONS .2. SELF ENERGY AND BAND-STRUCTURE DISTORTION [J].
INKSON, JC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (08) :1350-1362
[6]   SCHOTTKY BARRIERS AND PLASMONS [J].
INKSON, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :943-946
[7]  
INKSON JC, 1972, J PHYS C, V5, P7599
[8]   POWER LAW REVERSE CURRENT-VOLTAGE CHARACTERISTIC IN SCHOTTKY BARRIERS [J].
LEVINE, JD .
SOLID-STATE ELECTRONICS, 1974, 17 (10) :1083-1086
[9]   SCHOTTKY-BARRIER ANOMALIES AND INTERFACE STATES [J].
LEVINE, JD .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) :3991-+
[10]  
MACRAE AU, 1966, SEMICONDUCT SEMIMET, V2, P115