INTERNAL QUANTUM EFFICIENCY OF GAAS ELECTROLUMINESCENT DIODES

被引：48

作者：

HILL, DE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 11期

关键词：

D O I：

10.1063/1.1703006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3405 / &

共 25 条

[1] EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GAAS [J].

BRAUNSTEIN, R ;

PANKOVE, JI ;

NELSON, H .

APPLIED PHYSICS LETTERS, 1963, 3 (02) :31-33

[2] ONE-WATT GAAS P-N JUNCTION INFRARED SOURCE [J].

CARR, WN ;

PITTMAN, GE .

APPLIED PHYSICS LETTERS, 1963, 3 (10) :173-175

[3] COMMON OCCURENCE OF ARTIFACTS OR GHOST PEAKS IN SEMICONDUCTOR INJECTION ELECTROLUMINESCENCE SPECTRA [J].

CARR, WN ;

BIARD, JR .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2776-&

[4] QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J].

CHEROFF, G ;

STERN, F ;

TRIEBWASSER, S .

APPLIED PHYSICS LETTERS, 1963, 2 (09) :173-174

[5] DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J].

CUNNELL, FA ;

GOOCH, CH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :127-133

[6] EFFICIENCY MEASUREMENTS ON GAAS ELECTROLUMINESCENT DIODES [J].

GALGINAITIS, SV .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :295-&

[7]

GILLEO MA, 1963, ASDTDR63606 TECH DOC

[8]

GILLEO MA, 1963, J APPL OPT, V3, P765

[9]

GILLEO MA, 1963, AD413909 US AIR FORC

[10] DIFFUSION IN COMPOUND SEMICONDUCTORS [J].

GOLDSTEIN, B .

PHYSICAL REVIEW, 1961, 121 (05) :1305-&

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