PT-CU2O-CU SINGLE-CARRIER SPACE-CHARGE-LIMITED DIODES

被引：2

作者：

WEICHMAN, FL ^{[1
]}

CHEE, KT ^{[1
]}

机构：

[1] UNIV ALBERTA,DEPT PHYS,EDMONTON T6G 2J1,ALBERTA,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1977年 / 55卷 / 7-8期

关键词：

D O I：

10.1139/p77-101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：735 / 741

页数：7

共 18 条

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[2]

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[3]

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[4] PT-CU2O-CU DOUBLE INJECTION DIODES [J].

CHEE, KT ;

WEICHMAN, FL .

CANADIAN JOURNAL OF PHYSICS, 1977, 55 (7-8) :727-734

[5] CURRENT-VOLTAGE CHARACTERISTICS OF SINGLE-CRYSTAL CU2O DIODES [J].

CHEE, KT ;

WEICHMAN, FL .

CANADIAN JOURNAL OF PHYSICS, 1975, 53 (15) :1408-1414

[6] TRANSIENT DOUBLE INJECTION IN GERMANIUM [J].

DEAN, RH .

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[7] TRANSIENT DOUBLE INJECTION IN SEMICONDUCTORS WITH TRAPS [J].

DEAN, RH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :596-&

[8] TRANSIENT DOUBLE INJECTION IN TRAP-FREE SEMICONDUCTORS [J].

DEAN, RH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :585-&

[9]

KUZEL R, 1961, DIRECT CURR, V6, P172

[10]

Lampert M.A., 1970, CURRENT INJECTION SO

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