5W, DIFFRACTION-LIMITED, TAPERED-STRIPE UNSTABLE RESONATOR SEMICONDUCTOR-LASER

被引：30

作者：

MEHUYS, D

OBRIEN, S

LANG, RJ

HARDY, A

WEICH, DF

机构：

[1] SDL Inc., San Jose, CA 65134

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 22期

关键词：

LASER CAVITY RESONATORS; SEMICONDUCTOR JUNCTION LASERS;

D O I：

10.1049/el:19941272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic tapered-stripe unstable resonator laser diode operating at 952nm wavelength is demonstrated to emit greater than 5.0W in a diffraction-limited radiation pattern under pulsed conditions.

引用

页码：1855 / 1856

页数：2

共 5 条

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