PROPERTIES OF TIN HARD COATINGS PREPARED BY UNBALANCED MAGNETRON SPUTTERING AND CATHODIC ARE DEPOSITION USING A UNIPOLAR AND BIPOLAR PULSED BIAS VOLTAGE

被引:29
作者
GRIEPENTROG, M [1 ]
MACKRODT, B [1 ]
MARK, G [1 ]
LINZ, T [1 ]
机构
[1] MAGTRON MAGNETO ELEKTR GERATE GMBH,D-77833 OTTERSWEIER,GERMANY
关键词
TITANIUM NITRIDE; UNBALANCED MAGNETRON SPUTTERING; CATHODIC ARE DEPOSITION; PULSED BIAS VOLTAGE;
D O I
10.1016/0257-8972(95)08369-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
TiN hard coatings have been prepared by unbalanced magnetron (UBM) sputtering and cathodic are deposition using uni- and bipolar pulsed bias voltages. For UBM sputtering using a unipolar pulsed bias voltage the average substrate bulk temperature T-s was reduced to 220 degrees C without considerable loss of microhardness and adhesion by variation of the pulse parameters. Determination of the average energy E(p) delivered to the growing film per deposited particle leads to values lower than the critical transition energy (150 eV atom(-1)) between open porous and dense coatings. Using a bipolar pulsed bias voltage T-s decreased with increasing duration t(on)(+) of the positive bias pulse. It was found that E(p) increased with increasing t(on)(+) up to values found for d.c. bias voltage. The coatings prepared using a bipolar pulsed bias voltage at low T-s are dense and in compressive stress with acceptable microhardness and adhesion. First results of the investigation of TiN coatings prepared by cathodic are deposition using unipolar pulsed bias are given.
引用
收藏
页码:326 / 332
页数:7
相关论文
共 17 条
[1]   RESIDUAL-STRESS IN ION-ASSISTED COATINGS [J].
BULL, SJ ;
JONES, AM ;
MCCABE, AR .
SURFACE & COATINGS TECHNOLOGY, 1992, 54 (1-3) :173-179
[2]   CATHODIC ARC DEPOSITION OF TIN AND ZR(C,N) AT LOW SUBSTRATE TEMPERATURES USING A PULSED BIAS VOLTAGE [J].
FESSMANN, J ;
OLBRICH, W ;
KAMPSCHULTE, G ;
EBBERINK, J .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 140 :830-837
[3]  
KADLEC S, 1991, 10TH P INT S PLASM C, V3
[4]  
Mark G., 1994, US, Patent No. [5303139A, 5303139]
[5]  
MARK G, 1991, Patent No. 534068
[6]   REVISED STRUCTURE ZONE MODEL FOR THIN-FILM PHYSICAL STRUCTURE [J].
MESSIER, R ;
GIRI, AP ;
ROY, RA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :500-503
[7]  
MOVCHAN A, 1969, FIZ MET METALLOVED, V28, P553
[8]   THE UNBALANCED MAGNETRON - CURRENT STATUS OF DEVELOPMENT [J].
MUNZ, WD .
SURFACE & COATINGS TECHNOLOGY, 1991, 48 (01) :81-94
[9]   AN ALL-ROUND PERFORMER IN THE PHYSICAL VAPOR-DEPOSITION LABORATORY [J].
MUNZ, WD ;
VANNISSELROY, K ;
TIETEMA, R ;
HURKMANS, T ;
KEIREN, G .
SURFACE & COATINGS TECHNOLOGY, 1993, 58 (03) :205-212
[10]  
MUNZ WD, 1990, SURF COAT TECH, V50, P270