XPS AND AES STUDIES ON THE OXIDATION OF LAYERED SEMICONDUCTOR GASE

被引：116

作者：

IWAKURO, H ^{[1
]}

TATSUYAMA, C ^{[1
]}

ICHIMURA, S ^{[1
]}

机构：

[1] TOYAMA UNIV,FAC ENGN,DEPT ELECTR,TAKAOKA,TOYAMA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1143/JJAP.21.94

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：94 / 99

页数：6

共 16 条

[1] ELECTRONIC PROPERTIES OF THE III-VI LAYER COMPOUNDS GAS, GASE AND INSE .2. PHOTOEMISSION
ANTONANGELI, F
PIACENTINI, M
BALZAROTTI, A
GRASSO, V
GIRLANDA, R
DONI, E
[J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1979, 51 (01): : 181 - 197
[2] BECK A, 1961, HELV PHYS ACTA, V34, P370
[3] ELECTRICAL AND OPTICAL-PROPERTIES OF INTERCALATED GASE COMPOUND
ICHIMURA, S
TATSUYAMA, C
UENO, O
[J]. PHYSICA B & C, 1981, 105 (1-3): : 238 - 242
[4] X-RAY PHOTOEMISSION STUDY OF OXIDATION PROCESS AT CLEAVED (110) SURFACES OF GAAS, GAP AND INSB
IWASAKI, H
MIZOKAWA, Y
NISHITANI, R
NAKAMURA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) : 1925 - 1933
[5] CRYSTAL-STRUCTURE AND INTERATOMIC DISTANCES IN GASE
KUHN, A
CHEVY, A
CHEVALIER, R
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (02): : 469 - 475
[6] LEE PA, 1976, PHYSICS CHEM MATERIA, V4
[7] LEVY F, 1976, PHYSICS CHEM MAT LAY, V5, P146
[8] LEVY F, 1979, PHYSICS CHEM MATERIA, V6
[9] ENERGY-DEPENDENCE OF PHOTOELECTRON ATTENUATION LENGTH VIA OXIDATION OF SILICON
MCGOVERN, IT
PARKE, AW
WILLIAMS, RH
[J]. SOLID STATE COMMUNICATIONS, 1978, 26 (01) : 21 - 23
[10] ESCA STUDIES OF GA, AS, GAAS, GA2O3, AS2O3 AND AS2O5
MIZOKAWA, Y
IWASAKI, H
NISHITANI, R
NAKAMURA, S
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1978, 14 (02) : 129 - 141