ANALYSIS OF BURIED LAYERS FROM HIGH-DOSE OXYGEN ION-IMPLANTATION

被引：7

作者：

BUNKER, SN ^{[1
]}

SIOSHANSI, P ^{[1
]}

SANFACON, M ^{[1
]}

MOGROCAMPERO, A ^{[1
]}

SMITH, GA ^{[1
]}

机构：

[1] GE,CTR RES & DEV,SCHENECTADY,NY 12301

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90814-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：148 / 150

页数：3

相关论文

共 3 条

[1]

Berning PH, 1963, PHYS THIN FILMS, V1, P69

[2] REFRACTIVE-INDEX PROFILES AND RANGE DISTRIBUTIONS OF SILICON IMPLANTED WITH HIGH-ENERGY NITROGEN [J].

HUBLER, GK ;

MALMBERG, PR ;

SMITH, TP .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7147-7155

[3] SILICON ON INSULATOR BY ION-IMPLANTATION - A DREAM OR A REALITY [J].

PINIZZOTTO, RF .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :261-264