SILICON ON INSULATOR BY ION-IMPLANTATION - A DREAM OR A REALITY

被引：12

作者：

PINIZZOTTO, RF

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90563-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：261 / 264

页数：4

共 9 条

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[2] FORMATION OF ABRUPT INTERFACES BETWEEN SURFACE SILICON AND BURIED SIO2 LAYERS BY VERY HIGH-DOSE OXYGEN-ION IMPLANTATION [J].

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[3] SILICON ON INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF HIGH-DOSES OF REACTIVE IONS [J].

HEMMENT, PLF ;

PEART, RF ;

YAO, MF ;

STEPHENS, KG ;

ARROWSMITH, RP ;

CHATER, RJ ;

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :292-297

[4] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

ELECTRONICS LETTERS, 1978, 14 (18) :593-594

[5] CHARGES AT A LASER-RECRYSTALLIZED-POLYCRYSTALLINE-SILICON-INSULATOR INTERFACE [J].

KAMINS, TI ;

LEE, KF ;

GIBBONS, JF .

ELECTRON DEVICE LETTERS, 1980, 1 (01) :5-7

[6] SURFACE SILICON CRYSTALLINITY AND ANOMALOUS COMPOSITION PROFILES OF BURIED SIO2 AND SI3N4 LAYERS FABRICATED BY OXYGEN AND NITROGEN IMPLANTATION IN SILICON [J].

MAEYAMA, S ;

KAJIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05) :744-751

[7] ELECTRIC-FIELD-SHIELDING LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

NAKASHIMA, S ;

AKIYA, M ;

KATO, K .

ELECTRONICS LETTERS, 1983, 19 (15) :568-570

[8]

PINIZZOTTO RF, 1984, P MATER RES SOC, V27, P265

[9] EFFECTS OF IMPLANTATION TEMPERATURE ON THE PROPERTIES OF BURIED OXIDE LAYERS IN SILICON FORMED BY OXYGEN ION-IMPLANTATION [J].

TUPPEN, CG ;

TAYLOR, MR ;

HEMMENT, PLF ;

ARROWSMITH, RP .

APPLIED PHYSICS LETTERS, 1984, 45 (01) :57-59

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