EFFECTS OF IMPLANTATION TEMPERATURE ON THE PROPERTIES OF BURIED OXIDE LAYERS IN SILICON FORMED BY OXYGEN ION-IMPLANTATION

被引：54

作者：

TUPPEN, CG

TAYLOR, MR

HEMMENT, PLF

ARROWSMITH, RP

机构：

来源：

关键词：

D O I：

10.1063/1.95009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：57 / 59

页数：3

共 13 条

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[9] THE TOP SILICON LAYER OF SOI FORMED BY OXYGEN ION-IMPLANTATION
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