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COMPARISON BETWEEN THE ELECTRONIC-STRUCTURES OF GAAS(111) AND GAAS(111) FROM ANGLE-RESOLVED PHOTOEMISSION

被引：46
作者：
BRINGANS, RD
BACHRACH, RZ
机构：
来源：
PHYSICAL REVIEW LETTERS | 1984年 / 53卷 / 20期
关键词：
D O I：
10.1103/PhysRevLett.53.1954
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1954 / 1957
页数：4
相关论文
共 10 条
[1]  
BRINGANS RD, 1983, P INT SOC OPT ENG, V447, P58
[2]  
BRINGANS RD, UNPUB 1ST P INT C ST
[3]   VACANCY-INDUCED 2X2 RECONSTRUCTION OF THE GA(111) SURFACE OF GAAS [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1984, 52 (21) :1911-1914
[4]  
HANEMAN D, 1961, PHYS REV, V121, P1063
[5]   THEORY OF POLAR SEMICONDUCTOR SURFACES [J].
HARRISON, WA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1492-1496
[6]  
JAKOBI K, 1979, SURFACE SCI, V82, P270
[7]   SURFACE RELAXATION EFFECTS ON THE ELECTRONIC-STRUCTURE OF (111) AND (111) SURFACES OF GAP, GAAS, AND GASB [J].
NISHIDA, M .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (04) :535-552
[8]   NEW PI-BONDED CHAIN MODEL FOR SI(111)-(2BY1) SURFACE [J].
PANDEY, KC .
PHYSICAL REVIEW LETTERS, 1981, 47 (26) :1913-1917
[9]  
TONG SY, 1984, PHYS REV LETT, V52, P1793
[10]   EXPERIMENTAL-EVIDENCE FOR ONE HIGHLY DISPERSIVE DANGLING-BOND BAND ON SI(111) 2X1 [J].
UHRBERG, RIG ;
HANSSON, GV ;
NICHOLLS, JM ;
FLODSTROM, SA .
PHYSICAL REVIEW LETTERS, 1982, 48 (15) :1032-1035
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